boron doped sic in south africa

Abnormal Out-Diffusion of Epitaxially Doped Boron in 4H–SiC

Accessibility links Skip to content Accessibility Help Journals Journals list Browse more than 70 science

Donor-acceptor pair emission in β-SiC doped with boron -

7H. Kuwabara, S. Yamada, Free-to-bound transition in β-SiC doped with boron, Physica Status Solidi (a), 1975, 30, 2, 739Wiley Online Library

study of boron and phosphorus doping effects in SiC : H

A comparative study of boron and phosphorus doping effects in SiC : H films prepared by electron cyclotron resonance plasma CVD

4H-SiC pMOSFETs with Al-Doped S/D and NbNi Silicide Ohmic

4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts were demonstrated and were characterized at up to a temperature of 200 °C. For

Ultra-Shallow Doping B, Mg, Ni, Cu, Mn, Cr and Fe into SiC

Very recently, we reported a novel doping method called plasma dopingSudarshan, Boron Diffusion into 6H-SiC Through Graphite Mask,

oxidation and electrical behavior of Nb‐doped Ti3SiC2 as

Nb‐doped Ti3SiC2 compounds ((Ti1‐xNbx)3SiC2, x=0%, 2%, 5%, 7%, and 10%) as novel interconnect materials of intermediate temperature solid

Method for producing a region doped with boron in a SiC-layer

200439-A method for producing a crystalline layer of SiC having at least a region thereof doped with boron atoms comprises a step a) of ion implant

properties of highly boron-implantation doped 6H-SiC -

EBSCOhost serves thousands of libraries with premium essays, articles and other content including Electrical and microstructural properties of highly boron-

Radiative recombination in β-SiC doped with boron - Science

There are two kinds of photoluminescence in β-SiC associated with boron atoms, one of which is caused by the nitrogen donor-boron acceptors

Investigation on the properties of ta doped ti3sic2 as

approximation to ab initio density functional theory with a plane-wave basis and norm-conserving pseudopotentials on supercells of cubic (3C) SiC

of cement-based composite doped with ferrites and SiC fibers

Download Citation on ResearchGate | Electromagnetic wave absorbing properties of cement-based composite doped with ferrites and SiC fibers | Ba(Zn1-xCox)2

Synthesis and Characterization of Boron-Doped SiC for Visible

Boron-doped β-SiC (BxSiC) photocatalysts were prepared by in-situ carbothermal reduction, and their photocatalytic performances for H2 evolution under

Derived from Alko ides for Synthesis of Boron-Doped SiC

Carbothermal Reduction Process of Precursors Derived from Alko ides for Synthesis of Boron-Doped SiC Powder Article in Journal of Materials Science Letters 8

of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and

The conduction mechanism in heavily Al-doped or heavily Al-and N-codoped p-type 4H-SiC epilayers was investigated. In both the singly-doped and co

Laboratoire Charles Coulomb (L2C) - 4H-SIC p-type doping

4H-SIC p-type doping determination from secondary electrons imaging. 12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2018,

Single-crystal N-doped SiC Nanochannel Array Photoanode for

Request PDF on ResearchGate | Single-crystal N-doped SiC Nanochannel Array Photoanode for Efficient Photoelectrochemical Water Splitting | We report, for the

in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal

The expansion behavior of double Shockley stacking faults (DSFs) was investigated in heavily nitrogen doped 4H-SiC crystals at high temperatures up to 1350

Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes

a) schematic drawing of Pt/3C-SiC Schottky diode, b) I-V curve of V doped 3C-SiC, c) fitting of dV/d(ln(I)) and d) temperature dependent

Study of Boron-Doped Silicon Carbide Thin Films | Request PDF

Request PDF on ResearchGate | Study of Boron-Doped Silicon Carbide Thin Films | Prepared a-SiC thin films with plasma enhanced chemical vapor deposition

CDTE-BASED DOUBLE HETEROSTRUCTURES AND RELATED LIGHT-

Devices converting light to electricity (such as solar cells or photodetectors) including a heavily-doped p-type a-SiCsuby/sub:H and an i-Mg

[1804.06532] Boron-doping of cubic SiC for intermediate band

arXiv.org cond-mat arXiv:1804.06532(Help | Advanced search)Full-text links: Download:PDF Other formats (license)

(a) AFM topography of N-doped graphene sample. (b) AFM phase

Download scientific diagram | (a) AFM topography of N-doped graphene sample. (b) AFM phase image of N-doped graphene. Graphene layer covers the entire

US6900108B2 - High temperature sensors utilizing doping

US6900108B2 - High temperature sensors utilizing doping controlled, dielectrically isolated beta silicon carbide (SiC) sensing elements on a specifically

Structures and Magnetic Properties of Co, Al doped 3C-SiC

Technologies for the growth of 3C-SiC with crystalline quality and crystal enlarging crystal size and controlling doping levels which have not been