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Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened

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In accordance with the invention there is provided a method for manufacturing a reaction bonded silicon carbide body by heating, in a vacuum or an inert

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Silicon Carbide InTechApr 4, 2011 synthesis since the manufacturing process initiated by Acheson in 1892. . Crystalline SiC obtained by the AchesonProcess

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1. A method for manufacturing a silicon carbide substrate, comprising the steps of: preparing a base portion having first and second main surfaces

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2014721-Which high-tech material will be the silicon of the future: silicon carbide, gallium nitride, or some other substance yet to be discovered?

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METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - Patent

1. A method for manufacturing a silicon carbide substrate, comprising the a resist film having a pattern is formed on oxide film 126 by photo

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The silicon carbide manufacturing process can be divided into two general grading of the silicon carbide crude into finished sizes

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1. A method of fabricating a silicon carbide device, comprising: forming a plurality of a same type of vertical silicon carbide diodes on at least a

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