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Self-Powered Broadband (UV-NIR) Photodetector Based on 3C-SiC

Herein, we report on a selfpowered broadband [UV to near-infrared (NIR)] PD based on a single-crystalline SiC (100)/Si (100) heterojunction. In

UnitedSiCUJ3C1200 -

L; Bergonzo, P; (2007) The effects of methane concentration on diamond nucleation and growth during bias enhanced nucleation on 3C-SiC(100) surfaces

X-ray diffraction on stacking faults in 3C-SiC epitaxial

Description We present an investigation of the structural quality of arrays of 3C-SiC micropillars and microridges grown epitaxially on deeply etched Si(0

UnitedSiC650V7SiC FET

Joint Raman spectroscopy and HRXRD investigation of cubic gallium nitride layers grown on 3C-SiCJoint Raman spectroscopy and HRXRD investigation of cubic

Calculating the ban d structure of 3C-SiC u sing sp3 d5 s*

We report on a semiempirical tight-binding model for 3C-SiC including the effect of sp3 d5 s* orbitals and spin–orbit coupling (∆)

of surface and interface structure of AlN/3C-SiC/Ge/Si (


Nanomaterials | Free Full-Text | 3C-SiC Nanowires In-Situ

An in-situ, catalyst-free method for synthesizing 3C-SiC ceramic nanowires (SiCNWs) inside carbon–carbon (C/C) composites was successfully achieved

dielectrically isolated beta silicon carbide (SiC) sensing

(SiC) sensing elements on a specifically selected high temperature force In any event, as indicated, these articles teach the formation of 3C

free-standing epitaxial graphene fabrication on 3C-SiC/Si(

structure (NEXAFS) we find that hydrogen saturates the Si atoms at the topmost layer of the substrate, leading to free-standing graphene on 3C-SiC/Si(

Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes

a) schematic drawing of Pt/3C-SiC Schottky diode, b) I-V curve of V doped 3C-SiC, c) fitting of dV/d(ln(I)) and d) temperature dependent

solar cell based on the antireflective effect of nc-3c-SiC

We found that the nc-3C-SiC:H emitter can serve both as an emitter and antireflective coating for SHJ solar cell, which enables us to realize the

(Invited) Growth, Defects and Doping of 3C-SiC on Hexagonal

Technologies for the growth of 3C-SiC with crystalline quality and crystal size similar to hexagonal counterparts (6H- or 4H-SiC) are still at the

et de lEau - Trends in dopant incorporation for 3C-SiC

Trends in dopant incorporation for 3C-SiC thin films on silicon. Proceedings of the 6th European Conference on Silicon Carbide and Related Materials. EC

[email protected]: Calculating the band structure of 3C-SiC using sp

This method shows high accuracy for the evaluation of 3C-SiC band diagram in terms of both the experimental energy levels at high symmetry points and


To lower deposition temperature and reduce thermal mismatch induced stress, heteroepitaxial growth of single-crystalline 3C-SiC on 150 mm Si wafers was