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Advanced Power Technology’s new line of SiC ZERO RECOVERY Schottky Diodes is offered in plastic and hermetic packages. Packages include D2, D3, TO-220

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2017118-Selecting an SiC Schottky boost diodeis different from a Silicon diode because of its superior reverse characteristics (the virtual zero rev

Cree launches discrete 20A and 50A 650V SiC Schottky diode

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This paper concerns the problem of SPICE modelling of the class of silicon-carbide (SiC) Schottky diodes with thermal effects (selfheating) taken into

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SiC Schottky Diodes Shrink Energy Costs and Space

today introduced an expanded portfolio of silicon carbide (SiC) power “These GEN2 SiC Schottky Diodes in 3L TO-247 and 2L TO-263 packages

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of a 4H SiC Betavoltaic Nuclear Battery Based on Schottky Barrier DiodeSilicon carbide (SiC) is considered to be excellent material for radiation

Expanded SiC Schottky diode line from Littelfuse reduces

 today introduced four new series of 1200V silicon carbide (SiC) Schottky Diodes from its GEN2 product family, which was originally released in May

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Toshiba TRS6E65C,S1AQ(S SiC Schottky Diode, 650V 6A, 2-Pin TO

Silicon Carbide (SiC) Schottky Diode, Toshiba A range of Silicon Carbide (SiC) Schottky barrier diodes from Toshiba suitable for high-efficiency, high

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LITTELFUSE LSIC2SD120A08 Series, LSIC2SD120A15 Series, and LSIC2SD120A20 series of 1200V silicon carbide (SiC) Schottky Diodes offer current ratings of

Silicon Carbide (SiC) Schottky Diodes | ChipFind Datasheet

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Carbide Bipolar Junction Transistors SiC Schottky Diode

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Modeling and Characterization of SiC Schottky Power Diodes

Most of the present models of silicon carbide (SiC) Schottky diodes are not suitable for evaluating their performance from a system level. The models