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Cree, Inc. , a market leader in silicon carbide power devices, announces the availability of the industrys first commercial 1200V surface

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Cree Announces Highest Power Silicon Carbide Schottky

2007211-Cree, Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power semiconductors, today announced that it is shipping production qua

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Cree Inc.’s latest addition to its 1200V SiC Schottky diode product offering includes four new surface mount devices in 2A, 5A, 8A, and 10A

C3D02065E by Cree | Rectifiers | Arrow.com

A Schottky diode is disclosed that includes a silicon carbide substrate, a silicon carbide drift layer, a Schottky contact, and a passivation structure

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1200V Z-Rec? Family of Silicon Carbide Schottky Diodes

Cree, Inc. , a market leader in silicon carbide power devices, announces a new family of seven 1200V Z-Rec? silicon carbide Schottky diodes

Silicon Carbide Schottky Diodes Improve Energy Efficiency in

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Cree says SiC Schottky diodes significantly cut power loss |

DURHAM, N.C. -- Cree Inc. today announced its first silicon carbide (SiC) Schottky diode chips, which the company said could lead to the development