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Trench power MOSFET in silicon carbide and method of making

A structure of accumulated type trench MOSFET in silicon carbide(SiC) and forming method are disclosed. The MOSFET includes a trench gate having a gate

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Lateral power MOSFETs in silicon carbide by Jan Spitz

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MOSFET IN SILICON CARBIDE - NORTH CAROLINA STATE UNIVERSITY.

The present invention comprises a metal-oxide-semiconductor field-effect transistor (MOSFET) formed in silicon carbide (12). The doped source (10) and

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Analysis of Voltage Variation in Silicon Carbide MOSFETs

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SCT10N120AG - Automotive-grade Silicon carbide Power MOSFET

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Power Losses of Silicon Carbide MOSFET in HVDC Application -

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Simplified Silicon Carbide MOSFET Model Based on Neural Network

Silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has become the core device of power-switching converters with its excellent

of the reverse recovery current of SiC MOSFET , Silicon

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Interface Traps in Silicon Carbide MOSFETs

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Cree offers silicon carbide MOSFETs in bare-die form | Smart

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Silicon Carbide market update: From discrete devices to

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Silicon carbide MOSFET - Patent # 5661312 - PatentGenius

A silicon carbide MOSFET (10) is formed to have a high breakdown voltage. A breakdown enhancement layer (20) is formed between a channel region (14

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SiC MOSFET | Cree Inc. | New Products | Jun 2013 | Photonics

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Improving Inversion Layer Mobility In A Silicon Carbide Mosfet

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