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Silicon carbide semiconductor device

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layer on silicon carbide and semiconductor device with

201949-A semiconductor device includes a silicon carbide semiconductor body and a metal contact structure. Interface particles including a silicide

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silicon carbide layer, wherein each of the firstdoped silicon carbide epitaxial layer and forms a FIGS. 3A-3B are schematic cross-sectional

Method for producing a schottky diode in silicon carbide

The invention concerns a method for making a vertical Schottky diode on a highly doped N-type silicon carbide substrate (1), comprising steps which


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Fabricating a gallium nitride device with a diamond layer

doped GaN or GaN combined with another element. (e.g., silicon, silicon carbide, and so forthinsulator (SOI) substrate 122 (102) (FIG. 3A)

Silicon Carbide Semiconductor Device with Trench Gate

silicon carbide and spaced apart from one anotherdopant mask to form source regions of a first FIG. 3A is a schematic horizontal cross-

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doped silicon, silicon dioxide, silicon carbide or2 and 3A to 3D, one process to fabricate a form a diamond/GaN/diamond/diamond structure 360

Low resistance, stable ohmic contacts to silicon carbide, and

Stable, high temperature electrical contacts to silicon carbide formed using a unique silicide formation process that employs a sacial silicon layer betw