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SYSTEMS AND METHOD FOR OHMIC CONTACTS IN SILICON CARBIDE

A silicon carbide device is presented that includes a gate electrode disposed over a portion of a silicon carbide substrate as well as a dielectric film

The Silicon eyes

Inicio / Libros / The Silicon eyes [saltar al contenido] Comenta y valora este libro ISBN: 9780393057638 Editorial: W.W. Norton

SILICON CARBIDE: TWO VOLUME SET

SILICON CARBIDE: TWO VOLUME SETPeter FriedrichsTsunenobu KimotoLothar Ley

with silicon carbide substrate, has source of first FET

Semiconductor device with silicon carbide substrate, has source of first FET connected to drain of second FET, and gate of first FET connected to gate

a metal contact layer on silicon carbide and semiconductor

201949-A semiconductor device includes a silicon carbide semiconductor body and a metal contact structure. Interface particles including a silicide

Silicon carbide FET for high frequency and high performance

CLONES DE SILICON VALLEY, LOSROSENBERG, DAVID

Gate-drive considerations for silicon carbide FET-based half-

Gate-drive considerations for silicon carbide FET-based half-bridge circuitsSilicon Carbide field-effect devices are known to enable high-performance power

3.7.1 Silicon for libro fv

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RF and mm-Wave Power Generation in Silicon

Abstract This book presents the challenges and solutions of designing power amplifiers at RF and mm-Wave frequencies in a silicon-based process technology

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on wire bonding structure of silicon carbide junction FET

Method for wire bonding wire bonding contact region on wire bonding structure of silicon carbide junction FET of e.g. semiconductor component in e.g

135 CSi X 3 П Silicon carbide

It contains molecular constants (high-resolution spectroscopic data) of CSi X 3 П Silicon carbide Element System: C-Si Hill Formula: CSi Chemical

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