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Interacting with C-terminated Surface of Silicon Carbide-

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oxygen activation by solid iron doped silicon carbide

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| Growth and Self-Assembly of Silicon–Silicon Carbide

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US Patent for Method for manufacturing silicon carbide single

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Semiconductors: Silicon Carbide and Related Materials | Book

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coatings with the addition of silicon carbide (SiC) and

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Compaction Behavior of Spray-Dried Silicon Carbide Powders

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Silicon-carbide coating as mechanical enhancement for solar

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Dr. Yu. A. Vodakov; E. N. Mokhov; M. G. Ramm; A. D. Roenkov, 1979: Epitaxial growth of silicon carbide layers by sublimation sandwich method

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photostable single-photon sources in a device-bulk without resorting to the use of a cavity A silicon carbide room-temperature single-photon

- Method for growing single crystal of silicon carbide -

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The growth of silicon carbide by sublimation

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