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Gallium nitride transistors fabricated on cubic silicon carbide on siliconResearchers in Germany have developed gallium nitride (GaN) high-electron-mobility

Lattice thermal conductivity in cubic silicon carbide

The lattice thermal conductivity of cubic silicon carbide is evaluated by means of a microscopic model considering the discrete nature of the

Graphene electrodes on a planar cubic silicon carbide (3C-

2016229- Frewin, Christopher Leroy; Saddow, Stephen E.; and Coletti, Camilla, Graphene electrodes on a planar cubic silicon carbide (3C-SiC) long

Semiconductor device based on the cubic silicon carbide

A semiconductor apparatus includes a cubic silicon carbide single crystal thin film of a multilayer structure including an Alsubx/subGasub1-x/

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We demonstrate here by time-dependent density functional calculations that the experimentally achievable 1–2 nm sized silicon carbide nanocrystals

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201698-Silicon carbide powder was successfully transformed from hexagonal SiC into cubic SiC using the electric discharge assisted mechanical milli

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Growth Mechanism of Cubic-Silicon Carbide Nanowires : Figure 5

(b) Nanoclusters of SiC are revealed at , (c) Spherical and faceted SiC structures are shown at (inset: layers of SiC on the Si substrate), and

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EC21 Product Catalogs - cubic silicon carbide powders

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We demonstrate here by time-dependent density functional calculations that the experimentally achievable 1-2 nm sized silicon carbide nanocrystals can emit

《Amorphous and Crystalline Silicon Carbide and Related

The structure of three different phases on the (100) face of Cubic Silicon Carbide is examined using a charge self-consistent empirical tight

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Room Temperature Quantum Emission from Cubic Silicon Carbide

2014718-In this work we show that cubic phase silicon carbide nanoparticles with diameters in the range 45–500 nm can host other point defects resp

NACSIC - New Applications of Cubic Silicon Carbide - SINTEF

NACSIC - New Applications of Cubic Silicon Carbide NACSIC 2015 is the first workshop that gathers stakeholders in the emerging field of cubic SiC as an

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Single-photon emitters (SPEs) play an important role in a number of quantum information tasks such as quantum key distributions. In these protocols,

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Microstructural development in chemically vapor-deposited (CVD) high-purity beta-SiC during neutron and self-ion irradiation at elevated temperatures was

Growth mechanism of cubic-silicon carbide nanowires

200919-Growth mechanism of cubic-silicon carbide nanowires Full Text: PDF SIGN IN to get this Article Authors: K. Y. Cheong School of Materials an

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E. (2009). Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications. Journal of

gases in cubic zirconia and silicon carbide: A contrasted

The modifications of the microstructure of yttria-stabilized cubic zirconia and silicon carbide single crystals implanted with high concentrations of

Antisite Pair Recovery in Cubic Silicon Carbide (Journal

Ab Initio Atomic Simulations of Antisite Pair Recovery in Cubic Silicon Carbide Ab Initio Atomic Simulations of Antisite Pair Reco

CUBIC SILICON CARBIDE FILM MANUFACTURING METHOD, AND CUBIC

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Residual strains in cubic silicon carbide measured by Raman

2008116-Cubic (3C) silicon carbide (SiC) epilayers grown on Si substrates by chemical vapor deposition, characterized using transmission electron mi

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Cs diffusion in cubic silicon carbide - ScienceDirect

Undesired release of Cs through a silicon carbide coating of nuclear fuel is a significant concern for the design of the Very High Temperature Reactor (

Characterization of porous cubic silicon carbide deposited

Characterization of porous cubic silicon carbide deposited with Pd and orPurchase orCheck for this article elsewhere Recommended articlesCiting