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Full-Text | Demonstration of a Robust All-Silicon-Carbide

We have demonstrated that hexagonal silicon carbide junction isolation electrode devices have a much higher forward bias turn-on potential than Si (2.3 V

Study of Boron-Doped Silicon Carbide Thin Films | Request PDF

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US6214108B1 - Method of manufacturing silicon carbide single

Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened

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Silicon Carbide filter technology

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Silicon Carbide in the CIS: Production, Market and Forecast

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Lu, X.; Lee, J.Y.; Feng, P.X-L.; Lin, Q., 2013: Silicon carbide microdisk resonator We demonstrate a silicon carbide (SiC) microdisk resona

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Investigation of the growth processes from vapor phase of silicon carbide epitaxial layers: Thermodynamic analysis of the high temperature processes in the

SCT20N120 - Silicon carbide Power MOSFET 1200 V, 20 A, 189

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temperature ferromagnetism in Mn-doped silicon carbide

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Global Silicon Carbide Foams Market Expected to Witness a

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Zirconia Tube furnace Nichrome wire Cr20Ni80 strip

Raman and infrared measurements suggest the varied nature of surfaces of silicon carbide nanocrystals which elucidate the behavior of the silicon carbide

contact mobility measurements of graphene on silicon carbide

carrier density and mobility of epitaxial graphene grown on silicon carbide. (15) Hongqiang Wang (15) Jian Chen (15) Jérôme Faist (15) Kous

A 1 MHz hard-switched silicon carbide DC/DC converter (

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Temperature Measurement and Control for Silicon Carbide

The heating temperature of the silicon carbide sublimation growth crucible is changed by adjusting the output power of the medium frequency induction coil,

Copper-silicon carbide composite plating for inhibiting the

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Simplified Silicon Carbide MOSFET Model Based on Neural Network

Silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has become the core device of power-switching converters with its excellent