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In feeding a silicon carbide-forming gas generated by a method of heat-subliming silicon carbide or the like to the surface of a seed crystal (2) so

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| Growth and Self-Assembly of Silicon–Silicon Carbide

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Silicon carbide films were deposited on silicon substrates maintained at various temperatures using the tecnique of Pulsed Laser Deposition (PLD) employing a

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Silicon Carbide Wafer Market Is Expected to Reach 540 Million

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Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened