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Silicon Carbide Semiconductor Device with Trench Gate

A semiconductor device includes trench gate structures that extend from a first surface into a semiconductor body of silicon carbide. The trench gate

silicon carbide microdisk resonators : Nature Communications

Silicon carbide (SiC) is a very attractive material for making disk-shaped resonators for its unique characteristics28 including wide bandgap (~2.3−3

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Described are silicon carbide filters for use with liquid metals such as liquid tin, as well as methods of using such a filter to remove particles from

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Particulate Titanium Diboride–Silicon Carbide Composites

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Distinction of di ff erent silicon carbide polytypes using

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@ improved granular abrasive material (22) comprises silicon carbide particles (23) at least partially coated with an integral, durable surface layer (24)

Brownian motions in high-frequency silicon carbide micro

​Silicon carbide (​SiC) is a very attractive material for making disk-shaped resonators for its unique characteristics28 including wide bandgap (~2

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controlled, dielectrically isolated beta silicon carbide (

Semiconductor devices useful in high temperature sensing applications include a silicon carbide substrate, a silicon dioxide layer, and an outer layer of

Green Black Silicon Carbide Factory Anyang Huatuo Metallurgy

types of black silicon carbide and green silicon carbide, which both belong to the α-SiC, the black silicon carbide contains around 95% of Si, the

Fowler - Nordheim stress of n-type silicon carbide metal-

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Experimental correlation between varying silicon carbide and

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Silicon carbide semiconductor device including deep layer -

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Oxidation of Carbon Fiber‐Reinforced Silicon Carbide Matrix

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China Abrasive Flap Disc Silicon Carbide 180mm X 22mm (7 X 7

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Liquid Phase Sintered Silicon Carbide Abrasive Particles

An abrasive article includes a bonded abrasive body having abrasive particles contained within a bond material. The abrasive particles include silicon carbide