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Silicon carbide films were deposited on silicon substrates maintained at various temperatures using the tecnique of Pulsed Laser Deposition (PLD) employing a

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Silicon carbide matrix composite material (1) comprising silicon carbide matrix (2) as a host. The silicon carbide matrix (2) comprises first silicon

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Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened

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of Nano-Crystalline Carbon in Silicon Oxycarbide

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Simplified Silicon Carbide MOSFET Model Based on Neural Network

Silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has become the core device of power-switching converters with its excellent

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Investigation of the growth processes from vapor phase of silicon carbide Applied Physics A: Materials Science Processing 72(4): 487-490, 2001

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Described are silicon carbide filters for use with liquid metals such as liquid tin, as well as methods of using such a filter to remove particles from

controlled, dielectrically isolated beta silicon carbide (

Semiconductor devices useful in high temperature sensing applications include a silicon carbide substrate, a silicon dioxide layer, and an outer layer of

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