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Behavior in Liquid㏄hase㏒intered Silicon Carbide with Al2

Effect of Dynamic Microstructural Change on Deformation Behavior in Liquid㏄hase㏒intered Silicon Carbide with Al2O3–Y2O3–CaO Additions doi:10.1111/j

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Method of N2O growth of an oxide layer on a silicon carbide

Methods for fabricating a layer of oxide on a silicon carbide layer are provided by forming the oxide layer on the silicon carbide layer by oxidizing

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

At this time, the metal film is formed under a condition that an incident energy of incidence, on the silicon carbide wafer, of the metal material

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wococarbide is mainly service for tungsten carbide,superhard materials and other related industries,aiming to build the best tungsten-industry -chain global E

Making silicon-carbide kiln furniture

Making silicon-carbide kiln furniture doi:10.1007/ M. Strongin

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Cree to Invest US$1 Billion to Expand Silicon Carbide Capacity

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Interacting with C-terminated Surface of Silicon Carbide-

water, to remove the residues present on the silicon carbide wheels or diamond-impregnated wheels TX Sudan, TX Summerfield, TX Sundown, TX

of Separating Oil-Water Emulsion with Silicon Carbide

Study on Performance of Separating Oil-Water Emulsion with Silicon Carbide Dynamic Membrane Silicon carbide dynamic membrane was prepared with 1.0m pore

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Modeling of Structural Defects in Silicon Carbide

Modeling of Structural Defects in Silicon Carbide doi:10.1134/S0020168519010151Inorganic MaterialsE. V. SokolenkoNorth-Caucasus Federal UniversityG. V. Sly

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SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR

A silicon carbide semiconductor device includes a silicon carbide semiconductor layer, a gate insulating film formed on the silicon carbide semiconductor lay

the wetting state of super-repellent fabrics with liquids

Sintering of Nano Crystalline Silicon CarbideDatta, Madhusudan

carbon/silicon carbide_

Anonymous, 2007: Use of amino acids and silicon carbide fibers for improving in vitro plant regeneration and Agrobacterium mediated genetic transformation in

SCT10N120AG - Automotive-grade Silicon carbide Power MOSFET

20151118-The anopheline mosquitos [sic] of the Sudan Publication Type: Journal Article Year of Publication: 1956 Authors: Lewis, DJ Journal: Bulletin

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Hydrothermal synthesis of sp(3) bonded carbon from beta-SiC-

The X-ray diffraction studies of the silicon carbide-water experimental run Madhusudan, PByrappa, KYoshimura, M《Biology of Reproduction》