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Silicon carbide Schottky and P-i-N rectifiers [electronic resource] /Abstract ABSTRACT: There has been a significant research interest in Silicon Carbide (

Method of making silicon carbide rectifiers

rectifiers, as silicon, due to its higher melting point and thermal 1. The process of manufacturing an N-type silicon carbide rectifier,

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Growth of silicon carbide crystalline material on the first growth surface inDavid Phillip MaltaValeri F. Tsvetkov

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Method of making silicon carbide rectifiers

2009419-Method of making silicon carbide rectifiers United States Patent 2932878 Inventors: Harold, Jacobs Application Number: US75910458A Publicati

Large Diameter, Low Defect Silicon Carbide Boule Growth

MF Brady, DP Malta, D Henshall - 2001 - Google Scholar-29/03/13,19:10:49) 4 Silicon Carbide and Related

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Recent Advances in Silicon Carbide Crystal and Substrate TechnologyD. P. MaltaM. F. BradyM. R. CalusJ. J. SumakerisInternational

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single polytype single crystal silicon carbide wafer, diameter greater than 3David Phillip MaltaHudson McDonald HobgoodStephan Georg MUELLER

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Electronics - High-quality rectifiers with high-frequency insulation-an doi:10.1109/ISIE.1995.496478Spiazzi, G.Tenti, P.Maltavelli, P

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The invention includes the steps of heating a silicon carbide crystal havingMALTA, David, PhillipHOBGOOD, Hudson, McDonaldMUELLER, Stephan, Georg

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2014321-(ZOH) forAC/DC controlled rectifiers4.3A first-ordertransferfunctionforDC/ACControl EngineeringDepartment at the Higher Institute of Elec

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