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Silicon Carbide (SiC) devices belong to the so-called wide band gap the much higher breakdown field strength and thermal conductivity of SiC

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Silicon carbide ceramics with equiaxed grain structure were obtained byExperimental results revealed that the thermal conductivity of the SiC

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A study was made of the thermal conductivity of silicon carbide, produced by reactive sintering, over the range 200–1650°C. It is shown that the

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201917-The thermal conductivity is a key property in determining the friction-induced temperature rise on the surface of sliding components. In thi

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Thermal conductivity is measured on AI2O3 ceramic, structural SiC and high thermal conductivity SiC (2 wt% BeO addition) ceramics at a temperature

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Analysis of the temperature dependent thermal conductivity of silicon carbide for high temperature applications Journal of Applied Physics 88, 265 (2000);

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This study investigates the thermal diffusivity and conductivity of YAG/AlN-alloyed LPS-SiC as a function of composition and temperature using

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Thermal conductivity and electrical resistivity of SiC materials is given for fast neutron fluences up to 7.7x10 sup2/sup sup5/sup n/cm

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