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Radiation Resistance of Silicon Carbide Schottky Diode

Silicon carbide (SiC) is a wide band-gap semiconductor material with (a) Schematic diagram of a 4H-SiC Schottky diode which includes

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ON Semiconductor Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices.

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Cree launches discrete 20A and 50A 650V SiC Schottky diode

Cree Inc of Durham, NC, USA has added two new discrete 650V silicon carbide (SiC) rectifiers to its Z-Rec Schottky diode portfolio. Fabricated using

Silicon carbide (SiC) junction barrier Schottky

Silicon carbide (SiC) junction barrier Schottky diode and method for manufacturing sameThe invention discloses a SiC junction barrier Schottky diode and a

Modeling and Characterization of SiC Schottky Power Diodes

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SiC SchottkyModel

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2017118-Selecting an SiC Schottky boost diodeis different from a Silicon diode because of its superior reverse characteristics (the virtual zero rev

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Silicon carbide (SiC) Schottky diode and method

Silicon carbide (SiC) Schottky diode and method for manufacturing sameThe invention discloses a SiC Schottky diode and a method for manufacturing the same

Method for manufacturing silicon carbide semiconductor device

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Do Silicon Carbide Schottky Diodes Make Silicon Rectifiers

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Improved energy efficiency using an IGBT/SiC-Schottky diode

Rob (2012) Improved energy efficiency using an IGBT/SiC-Schottky diode This paper will demonstrate how the newer Silicon Carbide material