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states of mono- and bilayer graphene on SiC probed by STM

We present a scanning tunneling microscopy (STM) study of a gently-graphitized 6H-SiC(0001) surface in ultra high vacuum. From an analysis of atomic

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【PDF】XPS and STM investigation of the atomic-scale morphology and

982-1 [SUF] 1 XPS and STM investigation of the atomic-scale morphology and electronic structure of metals intercalated on Graphene/SiC(0001) Luis H

Epitaxial Graphene on SiC(0001): An Ultra-High Vacuum STM

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STM OBSERVATION OF GRAPHENE FORMATION USING SiC-ON-INSULATOR

Downloadable (with restrictions)! We used scanning tunneling microscopy to investigate graphene formation on an SiC-on-insulator (SiC-OI) substrate

Topographic STM images of the multilayer epitaxial graphene

Figure 1: Topographic STM images of the multilayer epitaxial graphene sample grown on SiC.From Real-space mapping of magnetically quantized graphene states

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states of mono- and bilayer graphene on SiC probed by STM

2013220-Official Full-Text Publication: Electron states of mono- and bilayer graphene on SiC probed by STM on ResearchGate, the professional network

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STM OBSERVATION OF GRAPHENE FORMATION USING SiC-ON-INSULATOR

STM OBSERVATION OF GRAPHENE FORMATION USING SiC-ON-INSULATOR SUBSTRATES + Authors M. NAITOH Department of Electrical Engineering and Electronics, Kyushu

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$4H\text{-SiC}(000\overline{1})$ substrates from STM studies

Epitaxial carbon was grown by heating $(000\overline{1})$ silicon carbide (SiC) to high temperatures $(1450\char21{}1600\text{ }\ifmmode^

Li-intercalated Graphene on SiC(0001) an STM study-

Li–intercalated Graphene on SiC(0001): an STM studySara Fiori, 1 Yuya Murata, 1 Stefano Veronesi, 1 Antonio Rossi, 1,2 Camilla Coletti, 2 and

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Interface structure of graphene on SiC: an ab initio and STM

High temperature treatment of SiC surfaces is a well established technique for producing graphene directly on top of an insulating substrate. In this domain

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Theoretical study of the structural properties of SiC(001) Si

Theoretical study of the structural properties of SiC(001) Si-terminated surface and the formation of its STM images ) Barbara Pieczyrak, Leszek Jurczysz

6H-SiC(0001) and GaN(0001) surfaces by XPS, LEED, and STM

In this work, the results of the growth of zirconium films deposited under the ultrahigh vacuum at room temperature on the 6H-SiC(0001) and

states of mono- and bilayer graphene on SiC probed by STM

We present a scanning tunneling microscopy (STM) study of a gently-graphitized 6H-SiC(0001) surface in ultra high vacuum. From an analysis of atomic

SiC film formation from C 6 0 monolayer on Si(111)-(7 7) and

We have investigated the thermal reaction of C sub6/sub sub0/sub molecules and the formation of SiC films on Si(111)-(7 7) and Si(

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【PDF】STM/AFM studies of ultrathin Sb layers growth on SiC(0001)

STM/AFM studies of ultrathin Sb layers growth on SiC(0001) Piotr Mazur, Stefan Zuber, Miosz Grodzicki, Antoni Ciszewski Institute of Experimental

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Optimization of etching parameters for STM tips and an Title STM study of SiC (0001) [square root]3 x [square root]3 reconstruction Author(s) Ng,

Few layers graphene on 6H-SiC(000-1): an STM study

We have analyzed by Scanning Tunnelling Microscopy (STM) thin films made of few (3-5) graphene layers grown on the C terminated face of 6H-SiC in

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