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During recent years, silicon carbide (SiC) power electronics has gone fromnew products in application areas where the benefits of the SiC technology

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A stress sensor based on a silicon field effect transistor

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silicon, and a channel body of a transistor and carbides of these metals such as hafnium SiGe (e.g., the method 1200 of FIG. 12)

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A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK

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(field effect transistor) device, wherein forming silicon carbide, silicon-germanium carbide alloy,semiconductor device 200 in a X-Z plane, and

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(field effect transistor) device formed on a silicon carbide, silicon-germanium carbide alloy,semiconductor device 200 in a X-Z plane, and

Electronics | Free Full-Text | Towards Silicon Carbide VLSI

A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK

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electron mobility transistor structures on 200-mm silicon

AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer

US Patent # 1,025,6351. Semi-floating gate FET - Patents.com

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Semi-floating gate FET - STMICROELECTRONICS, INC.

A semi-floating gate transistor is implemented as a vertical FET built on a silicon substrate, wherein the source, drain, and channel are vertically

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