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The growth of silicon carbide by sublimation

Download Citation on ResearchGate | On Jan 1, 1960, D.R. Hamilton and others published The growth of silicon carbide by sublimation The growth of s

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Modeling of Structural Defects in Silicon Carbide doi:10.1134/S0020168519010151Inorganic MaterialsE. V. SokolenkoNorth-Caucasus Federal UniversityG. V. Sly

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Silicon carbide is produced on a small scale by the decomposition in an inert atmosphere of gaseous or volatile compounds of silicon and carbon, allowing

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METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE The present invention includes steps below: (a) forming, on a drift layer, a first ion

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Pin Go; Changmo Sung; J. J. Kostetsky; T. Vasilos, 2002: Silicon nitride matrix composites with unidirectional silicon carbide whisker reinforcement

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L. S. Ramsdell, ―Studies on Silicon Carbide‖, American Mineralogist, vol. 32, pp. 64-82, 1947.Ramsdell, L. S. (1947): Studies on silicon

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METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

In a state where a silicon carbide substrate having a first main surface and second main surface opposite to each other is fixed to a base material

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